ace 7408b n - channel enhancement mode power mosfet ver 1. 2 1 description ACE7408B uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features ? v ds = 30 v, i d = 80 a ? r ds(on)1 @v gs = 4.5 v, typ 4 m absolute maximum ratings parameter s ymbol max unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v drain current ( continuous ) *ac t a =25 i d 80 a t a = 100 56 drain current ( pulsed ) *b i d m 220 a power dissipation t a =25 p d 55 w operating temperature / storage temperature t j /t stg - 55~150 a: the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, p ulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. packaging type dfn 5*6 - ep ordering i nformation ace 7408 b xx + h pn : dfn5*6 - ep pb - free halogen - free
ace 7408b n - channel enhancement mode power mosfet ver 1. 2 2 electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static drain - source breakdown voltage v (br)dss v gs = 0v, i d = 250a 30 v zero gate voltage drain current i dss1 v ds = 30 v, v gs = 0v 1 a gate threshold voltage v gs (th) v gs = v ds , i ds = 250a 1 1.3 2 v gate leakage current i gss v gs = 20 v , v ds =0v 100 na drain - source on - state resistance r ds(on) v gs = 10 v , i d = 20 a 2.7 3.5 m? v gs = 4.5 v , i d = 10 a 4 5.5 forward trans c onductance g fs v ds = 10v , i d = 2 0 a 22 s diode forward voltage v sd i sd = 1 0 a , v gs = 0v 1.2 v diode forward current i s 80 a switching total gate charge q g v ds = 15 v, i d = 2 0 a , v gs = 10 v 28 nc gate - source charge q gs 7 nc gate - drain charge q gd 11 nc turn - on delay tim e t d( on ) v dd = 15 v, r l = 15 a, v g s = 10 v , r g en = 2.5 21 ns turn - on rise time t r 17 ns turn - off delay time t d( off ) 72 ns turn - off fall time t f 21 ns dynamic input capacitance c iss v d s = 15 v,v g s = 0 v, f= 1.0mhz 2800 pf output capacitance c oss 660 pf reverse transfer capacitance c rss 2 50 pf
ace 7408b n - channel enhancement mode power mosfet ver 1. 2 3 typical performance characteristics
ace 7408b n - channel enhancement mode power mosfet ver 1. 2 4
ace 7408b n - channel enhancement mode power mosfet ver 1. 2 5 packing information d fn 5*6 - ep
ace 7408b n - channel enhancement mode power mosfet ver 1. 2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiven ess. ace technology co., ltd. http://www.ace - ele.com/
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